We present the observation of strain induced sign reversal of anisotropicmagnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm)deposited on STO (001) substrate (STO). We have also observed unusually largeAMR in LCMO/STO thin films with thickness of 6 nm below but close to its Curietemperature (TC) which decrease as the film thickness increases. The signreversal of AMR (with a maximum value of - 6) with magnetic field ortemperature for the 4 nm thin film may be attributed to the increase in tensilestrain in the plane of the thin film which in turn facilitates the rotation ofthe magnetization easy axis.
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